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Amplification of kW peak power femtosecond pulses in single quantum well InGaAs tapered amplifiers

Identifieur interne : 006C67 ( Main/Repository ); précédent : 006C66; suivant : 006C68

Amplification of kW peak power femtosecond pulses in single quantum well InGaAs tapered amplifiers

Auteurs : RBID : Pascal:08-0163090

Descripteurs français

Pascal (Inist)
- Optique ultrarapide, Automodulation phase, Laser semiconducteur, Laser pulsé, Amplificateur optique semiconducteur, Amplificateur impulsion, Diode laser, Optique non linéaire, Etude expérimentale, Domaine temps fs, Domaine temps ps, Durée impulsion, Temps relaxation, Puits quantique, Composé ternaire, Gallium Arséniure, Matériau dopé, Addition titane, Indium Arséniure, As Ga In, InGaAs, Saphir:Ti, 4255P, 4260D, 4265R, 4265J, Récupération gain.

English descriptors

KwdEn :
- Doped materials, Experimental study, Gain recovery, Gallium Arsenides, Indium Arsenides, Laser diodes, Nonlinear optics, Pulse amplifiers, Pulse width, Pulsed lasers, Quantum wells, Relaxation time, Self-phase modulation, Semiconductor lasers, Semiconductor optical amplifiers, Ternary compounds, Titanium additions, Ultrafast optics, fs range, ps range.

Abstract

The amplification of ps and fs pulses with peak powers of up to 4.5 kW has been investigated in a single quantum well InGaAs tapered amplifier. The pulses with durations of 100 fs or 2 ps were generated by a modelocked titanium-sapphire laser. The amplified pulses indicate strong gain saturation and carrier generation due to photon absorption in the laser active region which causes a temporal broadening of the amplified pulses as well as modifications of the optical spectrum. The gain recovery time was measured by a pump-probe experiment. The experimental results are analyzed with respect to the sub-ps gain dynamics which is described by a relaxation time approximation.

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Le document en format XML

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<author><name sortKey="Ulm, Thorsten" uniqKey="Ulm T">Thorsten Ulm</name>
<affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Department of Physics, Technical University of Kaiserslautern, Erwin-Schrödinger-Strae 46</s1>
<s2>67663 Kaiserslautern</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
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<country>Allemagne</country>
<placeName><region type="land" nuts="2">Rhénanie-Palatinat</region>
<settlement type="city">Kaiserslautern</settlement>
</placeName>
<orgName type="university">Université de technologie de Kaiserslautern</orgName>
</affiliation>
</author>
<author><name sortKey="Fuchs, Harry" uniqKey="Fuchs H">Harry Fuchs</name>
<affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Department of Physics, Technical University of Kaiserslautern, Erwin-Schrödinger-Strae 46</s1>
<s2>67663 Kaiserslautern</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
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<country>Allemagne</country>
<placeName><region type="land" nuts="2">Rhénanie-Palatinat</region>
<settlement type="city">Kaiserslautern</settlement>
</placeName>
<orgName type="university">Université de technologie de Kaiserslautern</orgName>
</affiliation>
</author>
<author><name sortKey="L Huillier, Johannes A" uniqKey="L Huillier J">Johannes A. L Huillier</name>
<affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Department of Physics, Technical University of Kaiserslautern, Erwin-Schrödinger-Strae 46</s1>
<s2>67663 Kaiserslautern</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
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<country>Allemagne</country>
<placeName><region type="land" nuts="2">Rhénanie-Palatinat</region>
<settlement type="city">Kaiserslautern</settlement>
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<orgName type="university">Université de technologie de Kaiserslautern</orgName>
</affiliation>
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<author><name sortKey="Klehr, Andreas" uniqKey="Klehr A">Andreas Klehr</name>
<affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Strae 4</s1>
<s2>12489 Berlin</s2>
<s3>DEU</s3>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>Allemagne</country>
<placeName><region type="land" nuts="3">Berlin</region>
<settlement type="city">Berlin</settlement>
</placeName>
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</author>
<author><name sortKey="Sumpf, Bernd" uniqKey="Sumpf B">Bernd Sumpf</name>
<affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Strae 4</s1>
<s2>12489 Berlin</s2>
<s3>DEU</s3>
<sZ>4 aut.</sZ>
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<country>Allemagne</country>
<placeName><region type="land" nuts="3">Berlin</region>
<settlement type="city">Berlin</settlement>
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<author><name sortKey="Gehrig, Edeltraud" uniqKey="Gehrig E">Edeltraud Gehrig</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Advanced Technology Institute, University of Surrey</s1>
<s2>Guildford, Surrey GU2 7XH</s2>
<s3>GBR</s3>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Royaume-Uni</country>
<wicri:noRegion>Guildford, Surrey GU2 7XH</wicri:noRegion>
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</author>
</titleStmt>
<publicationStmt><idno type="inist">08-0163090</idno>
<date when="2008">2008</date>
<idno type="stanalyst">PASCAL 08-0163090 INIST</idno>
<idno type="RBID">Pascal:08-0163090</idno>
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<seriesStmt><idno type="ISSN">0030-4018</idno>
<title level="j" type="abbreviated">Opt. commun.</title>
<title level="j" type="main">Optics communications</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Doped materials</term>
<term>Experimental study</term>
<term>Gain recovery</term>
<term>Gallium Arsenides</term>
<term>Indium Arsenides</term>
<term>Laser diodes</term>
<term>Nonlinear optics</term>
<term>Pulse amplifiers</term>
<term>Pulse width</term>
<term>Pulsed lasers</term>
<term>Quantum wells</term>
<term>Relaxation time</term>
<term>Self-phase modulation</term>
<term>Semiconductor lasers</term>
<term>Semiconductor optical amplifiers</term>
<term>Ternary compounds</term>
<term>Titanium additions</term>
<term>Ultrafast optics</term>
<term>fs range</term>
<term>ps range</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Optique ultrarapide</term>
<term>Automodulation phase</term>
<term>Laser semiconducteur</term>
<term>Laser pulsé</term>
<term>Amplificateur optique semiconducteur</term>
<term>Amplificateur impulsion</term>
<term>Diode laser</term>
<term>Optique non linéaire</term>
<term>Etude expérimentale</term>
<term>Domaine temps fs</term>
<term>Domaine temps ps</term>
<term>Durée impulsion</term>
<term>Temps relaxation</term>
<term>Puits quantique</term>
<term>Composé ternaire</term>
<term>Gallium Arséniure</term>
<term>Matériau dopé</term>
<term>Addition titane</term>
<term>Indium Arséniure</term>
<term>As Ga In</term>
<term>InGaAs</term>
<term>Saphir:Ti</term>
<term>4255P</term>
<term>4260D</term>
<term>4265R</term>
<term>4265J</term>
<term>Récupération gain</term>
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<front><div type="abstract" xml:lang="en">The amplification of ps and fs pulses with peak powers of up to 4.5 kW has been investigated in a single quantum well InGaAs tapered amplifier. The pulses with durations of 100 fs or 2 ps were generated by a modelocked titanium-sapphire laser. The amplified pulses indicate strong gain saturation and carrier generation due to photon absorption in the laser active region which causes a temporal broadening of the amplified pulses as well as modifications of the optical spectrum. The gain recovery time was measured by a pump-probe experiment. The experimental results are analyzed with respect to the sub-ps gain dynamics which is described by a relaxation time approximation.</div>
</front>
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<fA08 i1="01" i2="1" l="ENG"><s1>Amplification of kW peak power femtosecond pulses in single quantum well InGaAs tapered amplifiers</s1>
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<fA11 i1="01" i2="1"><s1>ULM (Thorsten)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>FUCHS (Harry)</s1>
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<fA11 i1="03" i2="1"><s1>L'HUILLIER (Johannes A.)</s1>
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<fA11 i1="05" i2="1"><s1>SUMPF (Bernd)</s1>
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<fA11 i1="06" i2="1"><s1>GEHRIG (Edeltraud)</s1>
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<fA14 i1="01"><s1>Department of Physics, Technical University of Kaiserslautern, Erwin-Schrödinger-Strae 46</s1>
<s2>67663 Kaiserslautern</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Strae 4</s1>
<s2>12489 Berlin</s2>
<s3>DEU</s3>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
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<fA14 i1="03"><s1>Advanced Technology Institute, University of Surrey</s1>
<s2>Guildford, Surrey GU2 7XH</s2>
<s3>GBR</s3>
<sZ>6 aut.</sZ>
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</fA66>
<fC01 i1="01" l="ENG"><s0>The amplification of ps and fs pulses with peak powers of up to 4.5 kW has been investigated in a single quantum well InGaAs tapered amplifier. The pulses with durations of 100 fs or 2 ps were generated by a modelocked titanium-sapphire laser. The amplified pulses indicate strong gain saturation and carrier generation due to photon absorption in the laser active region which causes a temporal broadening of the amplified pulses as well as modifications of the optical spectrum. The gain recovery time was measured by a pump-probe experiment. The experimental results are analyzed with respect to the sub-ps gain dynamics which is described by a relaxation time approximation.</s0>
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<fC02 i1="04" i2="3"><s0>001B40B60D</s0>
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<s5>03</s5>
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<s5>03</s5>
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<s5>04</s5>
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<s5>04</s5>
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<s5>09</s5>
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<s5>09</s5>
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<s5>11</s5>
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<s5>11</s5>
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<s5>12</s5>
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<fC03 i1="05" i2="3" l="ENG"><s0>Semiconductor optical amplifiers</s0>
<s5>12</s5>
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<s5>13</s5>
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<s5>13</s5>
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<s5>14</s5>
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<s5>41</s5>
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<s5>42</s5>
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<fC03 i1="11" i2="3" l="ENG"><s0>ps range</s0>
<s5>42</s5>
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<s5>43</s5>
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<s5>43</s5>
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<fC03 i1="12" i2="X" l="SPA"><s0>Duración impulso</s0>
<s5>43</s5>
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<fC03 i1="13" i2="3" l="FRE"><s0>Temps relaxation</s0>
<s5>44</s5>
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<s5>44</s5>
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<s5>47</s5>
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<s5>47</s5>
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<s5>50</s5>
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<s5>50</s5>
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<fC03 i1="16" i2="3" l="FRE"><s0>Gallium Arséniure</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>52</s5>
</fC03>
<fC03 i1="16" i2="3" l="ENG"><s0>Gallium Arsenides</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>52</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>Matériau dopé</s0>
<s5>53</s5>
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<s5>53</s5>
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<s5>61</s5>
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<s5>61</s5>
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<fC03 i1="19" i2="3" l="FRE"><s0>Indium Arséniure</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>62</s5>
</fC03>
<fC03 i1="19" i2="3" l="ENG"><s0>Indium Arsenides</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>62</s5>
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<fC03 i1="20" i2="3" l="FRE"><s0>As Ga In</s0>
<s4>INC</s4>
<s5>75</s5>
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<fC03 i1="21" i2="3" l="FRE"><s0>InGaAs</s0>
<s4>INC</s4>
<s5>83</s5>
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<fC03 i1="22" i2="3" l="FRE"><s0>Saphir:Ti</s0>
<s4>INC</s4>
<s5>84</s5>
</fC03>
<fC03 i1="23" i2="3" l="FRE"><s0>4255P</s0>
<s4>INC</s4>
<s5>85</s5>
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<fC03 i1="24" i2="3" l="FRE"><s0>4260D</s0>
<s4>INC</s4>
<s5>86</s5>
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<s4>INC</s4>
<s5>91</s5>
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<s4>INC</s4>
<s5>92</s5>
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<fC03 i1="27" i2="3" l="FRE"><s0>Récupération gain</s0>
<s4>CD</s4>
<s5>96</s5>
</fC03>
<fC03 i1="27" i2="3" l="ENG"><s0>Gain recovery</s0>
<s4>CD</s4>
<s5>96</s5>
</fC03>
<fN21><s1>098</s1>
</fN21>
</pA>
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</record>

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Amplification of kW peak power femtosecond pulses in single quantum well InGaAs tapered amplifiers

Amplification of kW peak power femtosecond pulses in single quantum well InGaAs tapered amplifiers

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